View FDS6982AS08_4338554.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

FDS6982AS
May 2008
FDS6982AS
General Description
The FDS6982AS is designed to replace two single SO8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages for notebook computers and other battery powered electronic devices. FDS6982AS contains two unique 30V, N-channel, logic level, PowerTrench MOSFETs designed to maximize power conversion efficiency. The high-side switch (Q1) is designed with specific emphasis on reducing switching losses while the low-side switch (Q2) is optimized to reduce conduction losses. Q2 also includes an integrated Schottky diode using Fairchild's monolithic SyncFET technology.
tmM
Dual Notebook Power Supply N-Channel PowerTrench SyncFET
Features
* Q2:
(R)
TM
Optimized to minimize conduction losses Includes SyncFET Schottky body diode RDS(on) max= 13.5m @ VGS = 10V RDS(on) max= 16.5m @ VGS = 4.5V
8.6A, 30V
* *
Low gate charge (21nC typical) Q1: Optimized for low switching losses RDS(on) max= 28.0m @ VGS = 10V RDS(on) max= 35.0m @ VGS = 4.5V
6.3A, 30V
Applications
* Notebook
*
Low gate charge (11nC typical)
D1 D1 D2 D2 S1 G1
5 6 7
Q1
4 3 2
Q2
SO-8
S2
8
1
G2
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
TA = 25C unless otherwise noted
Parameter
Q2
30
(Note 1a)
Q1
30 20 6.3 20 2 1.6 1 0.9 -55 to +150
Units
V V A W
- Continuous - Pulsed Power Dissipation for Dual Operation Power Dissipation for Single Operation
20 8.6 30
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
78 40
C/W C/W
Package Marking and Ordering Information
Device Marking FDS6982AS Device FDS6982AS Reel Size 13" Tape width 12mm Quantity 2500 units
(c)2008 Fairchild Semiconductor Corporation
FDS6982AS Rev B1
FDS6982AS
Electrical Characteristics
Symbol
BVDSS BVDSS TJ IDSS IGSS
TA = 25C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage
(Note 2)
Test Conditions
VGS = 0 V, ID = 1 mA ID = 250 uA VGS = 0 V, ID = 1 mA, Referenced to 25C ID = 250 A, Referenced to 25C VDS = 24 V, VGS = 0 V VGS = 20 V, VDS = 0 V
Type Min Typ Max Units
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 30 20 30 30 V 28 24 500 1 100 mV/C A nA
Off Characteristics
On Characteristics
VGS(th) VGS(th) TJ RDS(on)
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance
VDS = VGS, VDS = VGS,
ID = 1 mA ID = 250 A
1 1
1.4 1.9 -3.1 -4.3 11 16 13 20 26 25
3 3
V mV/C
ID = 1 mA, Referenced to 25C ID = 250 uA, Referenced to 25C VGS = 10 V, ID = 8.6 A VGS = 10 V, ID = 8.6 A, TJ = 125C VGS = 4.5 V, ID = 7.5 A VGS = 10 V, ID = 6.3 A VGS = 10 V, ID = 6.3 A, TJ = 125C VGS = 4.5 V, ID = 5.6 A VGS = 10 V, VDS = 5 V VDS = 5 V, VDS = 5 V, VDS = 10 V, f = 1.0 MHz ID = 8.6 A ID = 6.3 A VGS = 0 V,
13.5 20.0 16.5 28 33 35
m
ID(on) gFS
On-State Drain Current Forward Transconductance
A S
32 19 1250 610 410 180 130 85 1.4 2.2
Dynamic Characteristics
Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VGS = 15mV, f = 1.0 MHz pF pF pF
Switching Characteristics
td(on) tr td(off) tf td(on) tr td(off) tf Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time
(Note 2)
VDD = 15 V, ID = 1 A, VGS = 10V, RGEN = 6
VDD = 15 V, ID = 1 A, VGS = 4.5V, RGEN = 6
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
9 10 6 7 27 24 11 3 12 12 13 14 19 15 10 5
18 20 12 14 44 39 20 6 22 22 23 25 34 27 20 10
ns ns ns ns ns ns ns ns
FDS6982AS Rev B1
FDS6982AS
Electrical Characteristics
Symbol Parameter
(continued)
TA = 25C unless otherwise noted
Test Conditions
(Note 2)
Type Min
Typ Max Units
Switching Characteristics
Qg(TOT) Qg Qgs Qgd
Total Gate Charge at Vgs=10V Total Gate Charge at Vgs=5V Gate-Source Charge Gate-Drain Charge
Q2: VDS = 15 V, ID = 11.5A Q1: VDS = 15 V, ID = 6.3A
Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1
(Note 3) (Note 2) (Note 2) (Note 2)
21 11 12 6 3.1 1.8 3.6 2.4
30 15 16 9
nC nC nC nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Trr Qrr Trr Qrr VSD Maximum Continuous Drain-Source Diode Forward Current Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Charge Drain-Source Diode Forward Voltage IF = 11.5 A, diF/dt = 300 A/s IF = 6.3 A, diF/dt = 100 A/s VGS = 0 V, IS = 3 A VGS = 0 V, IS = 6 A VGS = 0 V, IS = 1.3 A 3.0 1.3 19 12 20 9 0.5 0.6 0.8 0.7 1.0 1.2 A ns nC ns nC V
(Note 3)
Q2 Q2 Q1
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
78C/W when mounted on a 2 0.5in pad of 2 oz copper
b)
125C/W when mounted on a 0.02 in2 pad of 2 oz copper
c)
135C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% 3. See "SyncFET Schottky body diode characteristics" below. 4 5
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics: Q2
30
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
3.0V
2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0
VGS = 2.5V
ID, DRAIN CURRENT (A)
4.5V
3.5V
20
3.0V 3.5V 4.0V
10
2.5V
4.5V
6.0V
10V
0 0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) 2
10 20 ID, DRAIN CURRENT (A)
30
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.05 RDS(ON), ON-RESISTANCE (OHM)
1.4 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 8.6A VGS = 10V 1.2
ID = 4.3 A 0.04
0.03 TA = 125 C 0.02
o
1
0.8
0.01
TA = 25 C
o
0.6 -50 -25 0 25 50 75 o TJ, JUNCTION TEMPERATURE ( C) 100 125
0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 3. On-Resistance Variation with Temperature.
30 VDS = 5V 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
10
VGS = 0V
IS, REVERSE DRAIN CURRENT (A)
1
TA = 125 C 25 C
o
o
TA = 125 C -55oC
o
0.1
-55oC
25oC
0.01 0 0.2 0.4 0.6 VSD, BODY DIODE FORWARD VOLTAGE (V) 0.8
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics: Q2
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 8.6A 8 VDS = 10V 20V 15V
2000
f = 1MHz VGS = 0 V
1600 CAPACITANCE (pF)
6
1200
Ciss
4
800 Coss 400 Crss
2
0 0 5 10 15 Qg, GATE CHARGE (nC) 20 25
0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30
Figure 7. Gate Charge Characteristics.
100 100s 1ms 10ms 100ms 1s 10s DC 0.1 VGS = 10V SINGLE PULSE RJA = 135oC/W TA = 25 C 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) 100
o
Figure 8. Capacitance Characteristics.
50 P(pk), PEAK TRANSIENT POWER (W)
RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10
40
SINGLE PULSE RJA = 135C/W TA = 25C
30
1
20
10
0 0.001
0.01
0.1
1 t1, TIME (sec)
10
100
1000
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
RJA(t) = r(t) * RJA RJA = 135C/W P(pk) t1 t2
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics Q1
20
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS = 10V
4.0V
3.5V
2.6
VGS = 3.0V
ID, DRAIN CURRENT (A)
16
6.0V
2.2
12
4.5V
1.8
3.5V
8
3.0V
1.4
4.0V 4.5V 6.0V
4
1
10V
0 0 1 VDS, DRAIN-SOURCE VOLTAGE (V) 2
0.6 0 5 10 ID, DRAIN CURRENT (A) 15 20
Figure 12. On-Region Characteristics.
Figure 13. On-Resistance Variation with Drain Current and Gate Voltage.
0.1 ID = 3.15 A RDS(ON), ON-RESISTANCE (OHM) 0.08
1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 6.3A VGS = 10V
1.4
1.2
0.06 TA = 125 C
o
1
0.04
0.8
0.02
TA = 25oC
0.6 -50 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150
0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) 10
Figure 14. On-Resistance Variation with Temperature.
20
Figure 15. On-Resistance Variation with Gate-to-Source Voltage.
100 IS, REVERSE DRAIN CURRENT (A)
VDS = 5V
VGS = 0V
10 1 0.1 0.01 0.001
TA = 125 C 25oC -55 C
o o
ID, DRAIN CURRENT (A)
15
10
TA = 125 C -55 C
o
o
5
25oC
0 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) 3.5
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4
Figure 16. Transfer Characteristics.
Figure 17. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics Q1
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 6.3A 8 VDS = 10V 6 15V 20V CAPACITANCE (pF)
800 f = 1MHz VGS = 0 V 600 Ciss 400 Coss 200 Crss
4
2 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 5 10 15 20 VDS, DRAIN TO SOURCE VOLTAGE (V)
0
Figure 18. Gate Charge Characteristics.
100 RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1ms 10ms 100ms 1s 10s VGS = 10V SINGLE PULSE o RJA = 135 C/W TA = 25oC 0.01 0.1 1 10 100 DC 100s P(pk), PEAK TRANSIENT POWER (W) 50
Figure 19. Capacitance Characteristics.
40
SINGLE PULSE RJA = 135C/W TA = 25C
30
1
20
0.1
10
0 0.001
0.01
0.1
VDS, DRAIN-SOURCE VOLTAGE (V)
1 t1, TIME (sec)
10
100
1000
Figure 20. Maximum Safe Operating Area.
Figure 21. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
0.1
0.1 0.05 0.02 0.01 SINGLE PULSE
RJA(t) = r(t) * RJA RJA = 135C/W P(pk) t1 t2
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1 t1, TIME (sec)
1
10
100
1000
Figure 22. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild's SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 23 shows the reverse recovery characteristic of the FDS6982AS. Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device.
0.1 IDSS, REVERSE LEAKAGE CURRENT (A)
TA = 125oC
0.01
0.001
TA = 100oC
Current: 1.6A/DIV
0.0001
0.00001
TA = 25oC
0.000001 0 5 10 15 20 VDS, REVERSE VOLTAGE (V) 25 30
Figure 25. SyncFET body diode reverse leakage versus drain-source voltage and temperature
Time: 10nS/DIV
Figure 23. FDS6982AS SyncFET body diode reverse recovery characteristic.
For comparison purposes, Figure 24 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDS6982).
Current: 1.6A/DIV
Time: 10nS/DIV
Figure 24. Non-SyncFET (FDS6982) body diode reverse recovery characteristic.
FDS6982AS Rev B1
FDS6982AS
Typical Characteristics
VDS RGE VGS
L tP DUT + VDD IAS
BVDSS VDS VDD
VGS
0V tp
vary tP to obtain required peak IAS
IAS 0.01 tAV Figure 27. Unclamped Inductive Waveforms
Figure 26. Unclamped Inductive Load Test Circuit
Drain Current Same type as
+ -
10V 10F
50k 1F
+ VDD DUT QG(TOT) 10V VGS QGS QGD
VGS
Ig(REF Charge, (nC) Figure 28. Gate Charge Test Circuit Figure 29. Gate Charge Waveform td(ON) VDS + DUT VDD
0V 90%
tON tr
10%
VDS VGS RGEN VGSPulse Width 1s
RL
tOFF td(OFF tf )
10% 90%
90%
VGS
0V 10%
50%
50%
Duty Cycle 0.1%
Pulse Width
Figure 30. Switching Time Test Circuit
Figure 31. Switching Time Waveforms
FDS6982AS Rev B1
TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidianries, and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CorePOWERTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) EfficentMaxTM EZSWITCHTM *
TM
(R)
Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FlashWriter(R) *
FPSTM F-PFSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM MotionMaxTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R)
(R)
tm
PDP-SPMTM Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM Quiet SeriesTM RapidConfigureTM Saving our world 1mW at a timeTM SmartMaxTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SuperMOSTM (R)
The Power Franchise(R)
tm
TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) Ultra FRFETTM UniFETTM VCXTM VisualMaxTM
* EZSWITCHTM and FlashWriter(R) are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve the design. This datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only.
Rev. I34
Preliminary
First Production
No Identification Needed Obsolete
Full Production Not In Production
FDS6982AS Rev.B1

▲Up To Search▲

Price & Availability of FDS6982AS08

	To Download FDS6982AS08 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .